Method of growing single crystals of rare earth metal iron garne

Details Method of growing single crystals of rare earth metal iron garne Method of growing single crystals of rare earth metal iron garne

1977-05-06

1978-05-30

Carter, Herbert T.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156622, 156617SP, 156DIG63, 156DIG79, 423263, 423594, 423600, 427128, B01J 1718, C01F 1700

Patent

active

040922081

ABSTRACT:
A method of growing monocrystalline bismuth rare earth iron garnet, either as a single crystal or as an epitaxial layer, from a solution containing composing components of the garnet together with a flux. The flux consists essentially of a mixture of Bi.sub.2 O.sub.3 and RO.sub.2, wherein R is at least one of the elements Si, Ge, Ti, Sn, Zr, Ce and Te, wherein the system Bi.sub.2 O.sub.3 --RO.sub.2 includes a eutectic composition having a eutectic temperature which is below the melting temperature of pure Bi.sub.2 O.sub.3. By using these Bi.sub.2 O.sub.3 --RO.sub.2 fluxes, the monocrystalline garnets produced have lower optical absorption coefficients at, for example 5100 A and 5600 A than similar garnets grown using lead-containing fluxes. Furthermore higher growth rates and higher growth temperatures are possible when using the Bi.sub.2 O.sub.3 --RO.sub.2 fluxes rather than lead-containing fluxes.

REFERENCES:
patent: 3697320 (1972-10-01), Hickes
patent: 3790405 (1974-02-01), Levinstein
patent: 3915661 (1975-10-01), Vichi
patent: 3947372 (1976-03-01), Shinagawa et al.
Wanklyn, "Chem. Abstracts," vol. 73, 1970, #102732q.

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