Method of growing single crystals of alpha aluminum phosphate

Details Method of growing single crystals of alpha aluminum phosphate Method of growing single crystals of alpha aluminum phosphate

1979-06-08

1981-01-27

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156623R, 156DIG61, C30B 710

Patent

active

042473586

ABSTRACT:
Single crystals of alpha aluminum phosphate of high crystal perfection are rown from seeded solutions of aluminum orthophosphate and orthophosphoric acid in such a manner as to provide direct visual observation of the crystal growth process and allow precise determination of nucleation and growth kinetics.
The method involves sealing the seeded solution in clear quartz ampules, inserting the ampules into a precisely temperature controlled silicone oil bath, increasing the temperature of the silicone oil bath from ambient temperature to approximately 150 degrees C. over a three hour period, programming the temperature of the bath upward at the rate of 0.1 to 2.0 degrees C. per day for periods up to sixty days, and removing the quartz ampules from the silicone oil bath and quickly cooling and removing the crystals.

REFERENCES:
patent: 2647043 (1953-07-01), Ihiber
patent: 2793941 (1957-05-01), Estes

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