Method of growing single crystals

Details Method of growing single crystals Method of growing single crystals

1974-05-30

1976-06-01

Ozaki, G.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148 15, 148 131, 75 65ZM, 75150, 75152, 75 84, 75 67R, B01J 1702

Patent

active

039606473

ABSTRACT:
In a method of growing of single crystals which are practically free from misorientation, namely single crystals of metals which exhibit an allotropic change of state at a temperature below their melting points, single crystals of the raw metal which has undergone unidirectional solidification are heated to a temperature between the allotropic transformation point and the melting point of the metal, the single crystals are maintained during a predetermined period in the vicinity of this temperature and cooled to a temperature below the allotropic transformation point. The single crystals are then annealed in order to obtain complete recrystallization of the metal and finally cooled to room temperature.

REFERENCES:
lee et al., Transactions, Am. Soc. for Metals, vol. 48, 1955, pp. 13-22.

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