Method of growing silicon monocrystal

Details Method of growing silicon monocrystal Method of growing silicon monocrystal

1998-11-05

2000-04-11

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

117 13, 423348, C30B 1530

Patent

active

060487798

ABSTRACT:
There is provided a method of growing silicon monocrystal by Czochralski method where cusp field is applied to molten silicon, including the step of applying cusp field to molten silicon so that a center of the cusp field is situated at a depth of one-third or greater of an entire depth of the molten silicon, the depth being defined as a distance from a surface level of the molten silicon. The method makes it possible to eliminate growth slits in all regions in a growth direction of grown silicon monocrystal, and in addition, to accomplish uniform oxygen concentration profile where a difference in an oxygen concentration in a direction of a diameter of crystal is equal to or smaller than 5%. Furthermore, the method makes it possible to eliminate growth slits in all regions in a growth direction in a large-diameter silicon monocrystal, for instance, having a 40 cm-diameter.

REFERENCES:
patent: 4350557 (1982-09-01), Scholl et al.
patent: 5840116 (1998-11-01), Kubo
patent: 5925185 (1999-06-01), Kawashima et al.
H. Hirata et al., "Silicon Crystal Growth in a Cusp Magnetic Field", Journal of Crystal Growth, vol. 96, (1989), pp. 747-755.
H. Hirata et al., Homogeneous Increase in Oxygen Concentration in Czochralski Silicon Crystals by a Cusp Magnetic Field, vol. 98, (1989), pp. 777-781.

Affiliated with

Also associated with

Rating

Method of growing silicon monocrystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of growing silicon monocrystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of growing silicon monocrystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1176125