Method of growing oxide layer on indium gallium arsenide

Details Method of growing oxide layer on indium gallium arsenide Method of growing oxide layer on indium gallium arsenide

1981-11-06

1983-02-22

Hoffman, James R.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

204192E, 427 39, B05D 314, B05D 512, B05D 724

Patent

active

043748678

ABSTRACT:
A method of growing a water insoluble native plasma oxide on an In.sub.0.53 Ga.sub.0.47 As layer of the type that is useful in the fabrication of MOS type devices is disclosed. Oxygen is bubbled through a water chamber in order to introduce water vapor into the growth chamber during the growing process. The InGaAs layer is first sputter etched in the oxygen plasma while a negative potential is applied to the semiconductor structure. The pressure is then increased and the oxides are grown while a positive potential is applied to the semiconductor structure.

REFERENCES:
Sakai et al., "InGaAsP/InP Photodiodes Antireflectively Coated with InP Native Oxide," IEEE Journal of Quantum Electronics, vol. QE-15, No. 10, Oct. 1979, pp. 1077-1078.
Chang, "Selective Plasma Oxidation of GaAs-A Study of the Interface Properties," Proc. of 11th Conf. on Solid State Devices, 1979, pp. 483-487.
Law, "Anodic Oxidation of InGaAsP," Appl. Physics Letters, vol. 37, No. 1, Jul. 1980, pp. 68-70.

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