Method of growing n-type III-V semiconductor materials on a subs

Details Method of growing n-type III-V semiconductor materials on a subs Method of growing n-type III-V semiconductor materials on a subs

1996-11-13

1998-10-13

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

117104, C30B 2940

Patent

active

058211551

ABSTRACT:
A method of doping a compound semiconductor layer n-type during epitaxial growth of the compound semiconductor layer includes supplying source materials including respective elements of a compound semiconductor material to a heated monocrystalline substrate, epitaxially growing a layer of the compound semiconductor material on the heated substrate and, simultaneously, supplying SiI.sub.4 as a dopant source material including silicon to the heated substrate, incorporating silicon as a dopant impurity producing n-type conductivity into the compound semiconductor layer during the epitaxial growth.

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patent: 5354584 (1994-10-01), Schmidt
patent: 5580382 (1996-12-01), Jackson et al.
Izumi et al., "Chemical Beam Epitaxial Growth of Si-Doped GaAs And InP By Using Silicon Tetraiodide", Applied Physics Letters, vol. 68, No. 22, pp. 3102-3104, May 27, 1996.
Jackson et al., "High-Efficiency Silicon Doping Of InP And In.sub.0.53 Ga.sub.0.47 As In Gas Source And Metalorganic Molecular Beam Epitaxy Using Silicon Tetrabromide", Applied Physics Letters, vol. 64, No. 21, May 1994, pp. 2867-2869.
Weyers et al., "Gaseous Dopant sources In MOMBE/CBE", Journal of Crystal Growth, vol. 105, 1990, pp. 383-392.
Abernathy et al., "Sn Doping Of GaAs And AlGaAs By MOMBE Using Tetraethylene", Journal of Crystal Growth, vol. 113, 1991, pp. 412-416.
Izumi et al., "Selective Area Chemical Beam Epitaxial Regrowth Of Si-Doped GaAs And InP By Using Silicon Tetraoxide For HFET Application", Ninth Annual Conference on Molecular Beam Epitaxy Aug. 1996, Malibu California.
J.D. Grange, in The Technology and Physics of Molecular Beam Epitaxy, edited by E.H.C. Parker, Plenum Press, p. 48 (no month given) 1985.

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