Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-03-15
1998-07-28
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 88, 117 89, 117 93, 4272552, 4272557, C30B 2502
Patent
active
057857555
ABSTRACT:
Disclosed are methods of preparing multilayer structures with InGaAsP layers of different compositions by metal organic vapor phase epitaxy, which result in formation of sharp heterointerfaces. After an InGaAsP well layer has been grown, the process is kept on standby with a flow of AsH.sub.3 and PH.sub.3, which are sources comprising elements of group V, at the well's composition ratios, and then with a flow of a source comprising an element of group V, including TBP (TBP/standby step), and an InGaAsP barrier layer is grown which has a smaller arsenic content than the well layer. TBP has a decomposition temperature approximately 100.degree. C. lower than PH.sub.3, and thus provides a phosphorus pressure which is five times or more as high as that of PH.sub.3 at identical growth temperatures and at identical V/III ratios. Therefore, during the process of growth of multilayer InGaAsP films, TBP may be used in a standby step with a flow of a source comprising an element of group V at the same composition ratio as is designed for an InGaAsP layer which has a smaller arsenic content than the previously grown layer and is subsequently grown, to prevent arsenic desorption from chamber walls and group V species desorption from the exposed interfaces, thus realizing sharp heterointerfaces.
REFERENCES:
patent: 5379220 (1995-01-01), Kuramata
patent: 5384151 (1995-01-01), Razeghi
McCrary et al.; "Low Pressure MOCVD in a vertical reactor:growth and characterization of INGaAsP on (100) InP for 1.3 .mu.m lasers"; 1991; pp. 39-46; Journal of Crystal Growth, vol. 112, No. 1, May 11, 1991.
Horita et al; "MOVPE Growth of InGaAsP using TBA and TBP with extremly low V/III ratio"; Nov. 1, 1992; pp. 123-128; Journal of Crystal Growth, vol. 124, No. 1/4.
Ae Satoshi
Nakamura Takahiro
Garrett Felisa
NEC Corporation
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