Production method of T-shaped gate electrode in semiconductor de

Details Production method of T-shaped gate electrode in semiconductor de Production method of T-shaped gate electrode in semiconductor de

1993-03-09

1994-04-19

Fourson, George

Fishing, trapping, and vermin destroying

437912, 437228, 437944, 257283, H01L 2144

Patent

active

053045114

ABSTRACT:
A method for producing a T-shaped gate electrode of a semiconductor device including forming an insulating film on a semiconductor substrate, etching away a prescribed region of the insulating film, depositing a metal film having a prescribed thickness, forming a first photoresist film and removing the photoresist film except where the insulating film has been removed, forming a second photoresist film, patterning the second photoresist film to expose the metal film along a sidewall of the insulating film, etching away a portion of the metal film using the first and second photoresist films as a mask, depositing a gate metal and removing the first and second photoresist films and overlying gate metal by lift-off, and etching away the metal films remaining on the semiconductor substrate and the insulating film. Thereby, a T-shaped gate electrode with shortened length is formed.

REFERENCES:
patent: 5006478 (1991-04-01), Kobayashi et al.
patent: 5032541 (1991-07-01), Sakamoto et al.
patent: 5240878 (1993-08-01), Fitzsimmons et al.

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