Method of growing InGaAsP on InP substrate with corrugation

Details Method of growing InGaAsP on InP substrate with corrugation Method of growing InGaAsP on InP substrate with corrugation

1984-07-25

1986-12-16

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG89, 372 96, C30B 2502

Patent

active

046295321

ABSTRACT:
A method of growing an InGaAsP layer on a corrugated InP substrate as a part of a procedure for producing a DFB semiconductor laser includes the step of heating the substrate up to temperatures approaching 700.degree. C. while holding the substrate in an atmosphere which contains arsine and phosphine. The substrate is subsequently moved to InGaAsP and InP growth chambers for growth of these respective layers. The method of the invention is advantageous in that the corrugated structure of the substrate is maintained intact throughout the procedure.

REFERENCES:
Ha Gai et al, Japanese Jl of Applied Physics, v 22, No. 5, 5/83, pp. L291-L293.
Kinoshita et al, Electronic Letters, 3/17/83, v 19, No. 6, pp. 215-216.
Sakai et al, IEEE Journal of Quantum Electronics, v QE-18, No. 8, 8/82.
Poi et al, Applied Phys Lett, 34(61), 3/15/79, pp. 393-395.
Clawson et al, Jl of Crystal Growth 46 (1979) 300-303.
Pigiuseppei et al, Jl of Crystal Growth 58 (1982) pp. 279-284.

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