Method of growing III group nitride single crystal and III...

Details Method of growing III group nitride single crystal and III... Method of growing III group nitride single crystal and III...

2007-10-23

2010-06-22

Hendrickson, Stuart (Department: 1793)

Chemistry of inorganic compounds

Nitrogen or compound thereof

Binary compound

C423S412000, C427S255110, C427S255150

Reexamination Certificate

active

07740823

ABSTRACT:
A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method including: preparing an r-plane (1-102) substrate; forming a nitride-based nucleation layer on the substrate; and growing a nonpolar a-plane nitride gallium single crystal on the nitride-based nucleation layer while altering increase and decrease of a ratio of V/III group to alternate a horizontal growth mode and a vertical growth mode.

REFERENCES:
patent: 6824610 (2004-11-01), Shibata et al.
patent: 2003/0198837 (2003-10-01), Craven et al.
patent: 2006/0091500 (2006-05-01), Lee et al.
patent: 2006-232640 (2006-09-01), None
patent: 10-2005-0006162 (2005-01-01), None
patent: 10-2006-0038058 (2006-05-01), None
patent: WO 03/089694 (2003-10-01), None
Korean Office Action, with English translation, issued in Korean Patent Application No. KR 10-2006-0132104, mailed Dec. 13, 2008.

Affiliated with

Also associated with

Rating

Method of growing III group nitride single crystal and III... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of growing III group nitride single crystal and III..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of growing III group nitride single crystal and III... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4190477