Method of growing GaN using CVD and HVPE

Details Method of growing GaN using CVD and HVPE Method of growing GaN using CVD and HVPE

2011-01-04

2011-01-04

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S479000, C257SE21085, C257SE21086

Reexamination Certificate

active

07863164

ABSTRACT:
A thick gallium nitride (GaN) film is formed on a LiAlO2substrate through two stages. First, GaN nanorods are formed on the LiAlO2substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO2substrate is mended.

REFERENCES:
patent: 7723216 (2010-05-01), Chakraborty et al.
patent: 2008/0017100 (2008-01-01), Chyi et al.

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