Method of growing gallium arsenide crystals using boron oxide en

Details Method of growing gallium arsenide crystals using boron oxide en Method of growing gallium arsenide crystals using boron oxide en

1983-07-22

1986-04-29

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

C30B 2702

Patent

active

045855110

ABSTRACT:
Gallium arsenide single crystals are grown under an encapsulant of boron oxide which contains a predetermined amount of water in the range of 200 to 1000 ppm. The GaAs crystals so produced are stable in that the resistivity of the GaAs upon heat treatment remains substantially constant. The GaAs single crystals as produced may be subjected to a bulk anneal to further improve the stability.

REFERENCES:
patent: 3070467 (1962-12-01), Fuller et al.
patent: 3551116 (1970-12-01), Woodall et al.
patent: 4135952 (1979-01-01), Anderson et al.
patent: 4299650 (1981-11-01), Bonner
patent: 4312681 (1982-01-01), Rupprecht et al.
"Carbon in Semi-Insulating, Liquid Encapsulated Czochralski GaAs" Hunter et al., App. Phys. Lett. 44(1) 1/1/84.
AuCoin et al., "Liquid Encapsulating Compounding and Czochrolski Growth of Semi-Insulating Gallium Arsenide" Solid State Technology (Jan. 1979), pp. 59-62, 67.

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