Method of growing films on substrates at room temperatures using

Details Method of growing films on substrates at room temperatures using Method of growing films on substrates at room temperatures using

1997-10-02

2000-07-18

Meeks, Timothy

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

42725518, 42725537, 427255393, 427255394, C23C 1640, C23C 1634

Patent

active

060904429

ABSTRACT:
The present invention provides a method for growing atomic layer thin films on functionalized substrates at room temperature using catalyzed binary reaction sequence chemistry. Specifically, the atomic layer films are grown using two half-reactions. Catalysts are used to activate surface species in both half-reactions thereby enabling both half-reactions to be carried out at room temperature.

REFERENCES:
patent: 5079600 (1992-01-01), Schnur et al.
patent: 5246886 (1993-09-01), Sakai et al.

Affiliated with

Also associated with

Rating

Method of growing films on substrates at room temperatures using does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of growing films on substrates at room temperatures using, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of growing films on substrates at room temperatures using will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2034157