Method of growing CaF.sub.2 film

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156612, 156613, 156614, 4272552, 423490, C30B 2510

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active

049350927

ABSTRACT:
The invention relates to a method of growing a single crystal CaF.sub.2 film on a single crystal Si substrate having a principal plane of (100). According to the invention, the substrate temperature is first set at 550.degree.-600.degree. C. to grow a first CaF.sub.2 film (first stage) and the substrate temperature is then raised to 750.degree. C. or higher to grow a second CaF.sub.2 film on the first CaF.sub.2 film (second stage), thus the growth of the CaF.sub.2 films is performed separately in two stages. Since, in the second stage, the growth of CaF.sub.2 film is possible even at higher substrate temperature, the method of growing according to the invention makes it possible to grow a single crystal CaF.sub.2 film with flat surface morphology and excellent crystal quality.

REFERENCES:
Asano et al., "Heteroepitatial Growth of Group IIa-Fluoride Films on Si Substrates", Japanese Journal of Applied Physics, vol. 22, No. 10, Oct. 83, 1474-1481.
Phillips et al., "Post Growth Annealing Treatments of Epitatial CaF.sub.2 n Si (100)", Journal of Electrochem. Soc., vol. 133, No. 1, pp. 224-227.
Schowalter et al., "Molecular Beam Epitaxy Growth and Applications of Epitaxy Fluoride Films", Journal Vacuum Science Tech., A4(3) May/Jun. 1986, pp. 1026-1031.

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