Method of growing a semiconductor material by epilaxy

Details Method of growing a semiconductor material by epilaxy Method of growing a semiconductor material by epilaxy

1993-07-01

1994-08-30

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 93, 117935, 117938, 117939, H01L 2120

Patent

active

053428056

ABSTRACT:
This invention concerns itself with an improved method of producing sharply defined misfit dislocations; (MD) with a new, inexpensive method of doping these misfit dislocations with Au; with invention that a combination of Au and Pt doping in misfit dislocations is superior to any amount of Au and to some specific placements of the misfit dislocations in the device structure.

REFERENCES:
patent: 5084411 (1992-01-01), Laderman et al.
patent: 5097308 (1992-03-01), Salih

Affiliated with

Also associated with

Rating

Method of growing a semiconductor material by epilaxy does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of growing a semiconductor material by epilaxy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of growing a semiconductor material by epilaxy will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-29880