Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-03-22
2005-03-22
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S084000, C257S094000, C438S022000, C438S024000
Reexamination Certificate
active
06870194
ABSTRACT:
An apparatus and a method are provided for generating an optical pulse by using a current pulse. The arrangement is based on a specific semiconductor structure, where a carrier injector is separated from the optically active region by a potential barrier for the injected carriers and on low carrier mobility in the semiconductor component, which features give rise to formation of a current-assisted strong electric field in the optically active region at moderate current densities before positive net gain is achieved. The current-assisted electric field broadens the gain spectrum in the active layer thus suppressing positive net gain and permitting carrier accumulation in the active layer. When the current pulse is stopped, the positive net gain is achieved, giving rise to an optical emission from the active layer.
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Kostamovaara Juha Tapio
Shestak Larisa
Sverdlov Mikhail
Vainshtein Sergey
Nguyen Dilinh
Oulun Yliopisto
Young & Thompson
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