Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2008-01-15
2008-01-15
Dinh, Paul (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C716S030000, C716S030000
Reexamination Certificate
active
07320116
ABSTRACT:
A method of generating library data for a cell constructed of interconnected MOS transistors, includes a resistance extraction step which extracts source and drain resistances according to source and drain region surface areas by using a resistance calculating formula or referring to a resistance extraction reference file which, when the source and drain regions have a first surface area region, treats the source and drain resistances as resistance values depending on the surface areas, and when the source and drain regions have a second surface area region larger than the first surface area region, treats the source and drain resistances as fixed resistance values; and a simulation step which generates an input-output characteristic for the cell from a netlist containing a MOS transistor model that includes the extracted source resistances and drain resistances and connection information for the model, and from input signals.
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patent: 7139990 (2006-11-01), Singh et al.
patent: 2003/0088842 (2003-05-01), Cirit
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Dinh Paul
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
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