Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1989-02-28
1990-08-21
Kaplan, G. L.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
156345, 156643, 20429832, 20429834, C23F 404
Patent
active
049503766
ABSTRACT:
A method of gas reaction process control in which plasma gas generated in a location different than a location at which a specimen is held is transported to a location at which the specimen is held and gas processing of the specimen is carried out. A control electrode with porous structure permeable to the plasma gas is provided in the transportation route and a voltage is applied to the control electrode voltage for adjusting the specimen surface potential so as to prevent degradation of the specimen due to specimen surface potential.
REFERENCES:
patent: 4158589 (1979-06-01), Keller et al.
patent: 4349409 (1982-09-01), Shibayama et al.
Hayashi Yutaka
Ishii Kenichi
Kinoshita Eita
Kondo Yasushi
Agency of Industrial Science & Technology
Kaplan G. L.
Ministry of International Trade & Industry
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