Method of frabricating a MOS transistor having a composite gate

Details Method of frabricating a MOS transistor having a composite gate Method of frabricating a MOS transistor having a composite gate

1996-04-29

1998-07-21

Trinh, Michael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438303, 438307, H01L 213205

Patent

active

057834784

ABSTRACT:
A novel, reliable, high performance MOS transistor with a composite gate electrode which is compatible with standard CMOS fabrication processes. The composite gate electrode comprises a polysilicon layer formed on a highly conductive layer. The composite gate electrode is formed on a gate insulating layer which is formed on a silicon substrate. A pair of source/drain regions are formed in the substrate and are self-aligned to the outside edges of the composite gate electrode.

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