Method of forming wiring with gaps in bend to improve electromig

Details Method of forming wiring with gaps in bend to improve electromig Method of forming wiring with gaps in bend to improve electromig

1995-09-29

1997-05-27

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438927, 438666, H01L 2128

Patent

active

056331983

ABSTRACT:
A new method of metallization using a new design of metal contact shape, contact/via profile, and metal lines having considerably reduced current density and improved electromigration of metal lines is achieved. Metal contacts are formed in a rectangular shape instead of a square shape with the wider side perpendicular to the current direction. Contact openings are made having concavo-concave profiles which can provide a wider conducting cross-sectional area than can conventional openings with a vertical profile near the contact bottom. Gaps are formed within wide and high current metal lines so that current density can be effectively lowered by utilizing the whole metal line uniformly.

REFERENCES:
patent: 4625227 (1986-11-01), Hara et al.
patent: 4812419 (1989-03-01), Lee et al.
patent: 5101261 (1992-03-01), Maeda
patent: 5288948 (1994-02-01), Fukuda et al.
S. Wolf "Silicon Processing for the VLSI Era, vol. 2.", Lattice Press, 1990, pp. 273-275.

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