Method of forming wiring structure of semiconductor device

Details Method of forming wiring structure of semiconductor device Method of forming wiring structure of semiconductor device

1996-12-19

1999-02-23

Bower, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

H01L 214763

Patent

active

058743570

ABSTRACT:
A wiring structure of a semiconductor device includes a substrate; a first conductive layer formed in the substrate; an insulation film formed on the substrate including the first conductive layer and having a contact hole therein through which the upper surface of the first conductive layer is exposed, wherein the contact hole includes an upper contact hole and a lower contact hole having a shape undercut into the insulation film and thus being wider than the upper contact hole; and a second conductive layer formed on the insulation film so as to thoroughly fill the contact hole and electrically connected to the first conductive layer.

REFERENCES:
patent: 521792 (1991-07-01), Kim et al.
patent: 4556897 (1985-12-01), Yorikane et al.

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