Method of forming wiring structure for semiconductor device

Details Method of forming wiring structure for semiconductor device Method of forming wiring structure for semiconductor device

1998-08-14

1999-12-14

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438629, 438643, 438648, 438649, 438653, 438655, 438656, 438672, 438682, 438683, 438685, H01L 214763

Patent

active

060017295

ABSTRACT:
A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of a high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on at least the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by selective Al-CVD, and a metal wiring formed on the insulating film. The metal wiring is electrically connected to the diffusion region by the plug, the anti-diffusion film and the silicide film. The anti-diffusion film is formed by nitriding the surface of the silicide film such that only the grain boundaries of the grains of the silicide film are nitrided.

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