Method of forming wiring layer

Details Method of forming wiring layer Method of forming wiring layer

1997-05-06

2000-05-09

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438660, 438688, H01L 2144

Patent

active

060603909

ABSTRACT:
An interlayer insulating film made of insulating material is deposited on a substrate having a conductive region at least partially on the surface area thereof. A connection hole is formed through the interlayer insulating film, to expose the conductive region. The connection hole is filled with a plug made of conductive material. An underlying layer made of Ti is deposited over the whole surface of the substrate including the surface of the plug. A wiring layer made of Al alloy is deposited on the underlying layer, without exposing the substrate to the external atmosphere after the deposition of the Ti layer. The wiring layer is reflowed by heating the substrate. A method is provided which is capable of connecting an upper wiring layer to a lower conductive region without lowering resistance to electromigration and lowering step coverage.

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Sze, S.M., Semiconductor Devices Physics and Technology, John Wiley & Sons, pp. 4, 6-7, 1985.

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