Method of forming viahole

Details Method of forming viahole Method of forming viahole

1996-10-17

1999-11-09

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438638, 438639, 438640, 438668, 438672, 438675, H01L 213213

Patent

active

059813768

ABSTRACT:
A method of forming a viahole in an interlayer insulating film without the formation of irregularities on a side wall of the viahole. The method includes a first step of forming a viahole in an interlayer insulating film having a multi-layer structure of plural kinds of insulating layers; a second step of forming a side wall film on a side wall of the viahole; and a third step of removing a native oxide film formed on a bottom portion of the viahole by etching.

REFERENCES:
patent: 4430791 (1984-02-01), Dockerty
patent: 5173443 (1992-12-01), Biricik et al.
patent: 5319264 (1994-06-01), Nagamine et al.
patent: 5356830 (1994-10-01), Yoshikawa et al.
patent: 5393682 (1995-02-01), Liu
patent: 5472900 (1995-12-01), Vu et al.
patent: 5502004 (1996-03-01), Park

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