Method of forming uniform ultra-thin oxynitride layers

Details Method of forming uniform ultra-thin oxynitride layers Method of forming uniform ultra-thin oxynitride layers

2007-04-10

2007-04-10

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S513000, C438S775000

Reexamination Certificate

active

10630970

ABSTRACT:
Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.

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