Method of forming ultra thin silicon oxynitride for gate...

Details Method of forming ultra thin silicon oxynitride for gate... Method of forming ultra thin silicon oxynitride for gate...

2007-04-10

2007-04-10

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S513000, C438S542000, C438S663000, C438S761000, C438S778000

Reexamination Certificate

active

10992894

ABSTRACT:
A method of forming a gate dielectric layer is disclosed. The method comprises the following steps. A substrate is provided having silicon regions containing surfaces upon which gate dielectrics are to be disposed. An oxide is formed over the surfaces. A silicon layer is formed over the oxide layer. A nitridation process is performed. An optional high temperature annealing step may be performed.

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