Method of forming U-shaped floating gate with a poly...

Details Method of forming U-shaped floating gate with a poly... Method of forming U-shaped floating gate with a poly...

2011-07-26

2011-07-26

Fahmy, Wael M (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S588000, C257S309000, C257S317000

Reexamination Certificate

active

07985670

ABSTRACT:
A method of realizing a flash floating poly gate using an MPS process can include forming a tunnel oxide layer on an active region of a semiconductor substrate; and then forming a first floating gate on and contacting the tunnel oxide layer; and then forming second and third floating gates on and contacting the first floating gate, wherein the second and third floating gates extend perpendicular to the first floating gate; and then forming a poly meta-stable polysilicon layer on the first, second and third floating gates; and then forming a control gate on the semiconductor substrate including the poly meta-stable polysilicon layer. Therefore, it is possible to increase the surface area of the capacitor by a limited area in comparison with a flat floating gate. As a result, it is possible to improve the coupling ratio essential to the flash memory device and to improve the yield and reliability of the semiconductor device.

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