Method of forming tungsten polymetal gate having low resistance

Details Method of forming tungsten polymetal gate having low resistance Method of forming tungsten polymetal gate having low resistance

2007-03-29

2009-06-02

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S585000, C438S653000, C257SE21198

Reexamination Certificate

active

07541269

ABSTRACT:
A tungsten polymetal gate is made by forming a gate insulation layer and a polysilicon layer on a semiconductor substrate; depositing a barrier layer on the polysilicon layer; depositing a tungsten nucleation layer on the barrier layer through an ALD process; depositing a tungsten layer on the tungsten nucleation layer through a CVD process; depositing a hard mask layer on the tungsten layer; and etching the hard mask layer, the tungsten layer, the tungsten nucleation layer, the barrier layer, the polysilicon layer, and the gate insulation layer.

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