Method of forming tungsten interconnect with tungsten oxidation

Details Method of forming tungsten interconnect with tungsten oxidation Method of forming tungsten interconnect with tungsten oxidation

1998-10-04

2000-11-07

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438725, 438720, 438672, H01L 2144

Patent

active

061436534

ABSTRACT:
A method of forming a metal interconnect structure and via plugs over a dielectric layer having a plurality of vias formed therein is disclosed. The method comprises the steps of: forming tungsten via plugs in the plurality of vias; depositing a metal layer over the dielectric layer and the plurality of tungsten via plugs; patterning and etching the metal layer using a photoresist layer to form the metal interconnect structure; oxidizing the metal interconnect structure and the tungsten via plugs to form a metal oxide layer over the metal interconnect structure and tungsten via plugs; and performing a wet strip on the metal interconnect structure.

REFERENCES:
patent: 5480748 (1996-01-01), Bakeman, Jr. et al.
patent: 5567271 (1996-10-01), Chu et al.
patent: 5776832 (1998-07-01), Hsieh et al.
J. Hackenburg, et al. "Effects of Plasma Stripping on the Oxidation states of Al and W surfaces", J. Vac. Sci. & Eng., vol. 6, No. 3, pp. 1388-1392, May 1988.
P.-L. Pai, et al. "Metal corrosion in wet resist-stripping process", Microelectronic Manufacturing and Testing, vol. 13, No. 2, pp. 37-39 May 1988.
S. Bothra, et al. "A New Failure Mechanism by Corrosion of Tungsten in a Tungsten Plug Process" IEEE 36.sup.th Annual Int. Reliability Physics Symp., Mar. 1998.

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