Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1989-04-17
1990-12-04
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419229, 20429803, 20429807, 20429825, C23C 1454, C23C 1456
Patent
active
049751689
ABSTRACT:
A method of forming a transparent conductive thin film by sputtering includes the step of placing a target consisting of a conductive oxide material and a substrate on which the thin film is to be formed in a pressure vessel, the step of supplying argon gas and oxygen gas after the pressure vessel is substantially evacuated, the step of supplying a sputtering current to the target to maintain a discharge state, the step of detecting the partial pressure of oxygen in the gas mixture in the pressure chamber, and the step of controlling the flow rate of oxygen gas. The flow rate of the oxygen gas is controlled by a control unit such that the value of the partial pressure of oxygen which is detected in the partial pressure detection step is always kept constant.
REFERENCES:
patent: 4172020 (1979-10-01), Tisone et al.
patent: 4336119 (1982-06-01), Gillery
patent: 4362936 (1982-12-01), Hofmann et al.
patent: 4428811 (1984-01-01), Sproul et al.
F. H. Gillery, J. Vac. Sci. Technol., vol. 15(2), Mar./Apr. 1978, pp. 306-308.
Ohno Ichiro
Shiota Junji
Uchiumi Hidetaka
Casio Computer Co. Ltd.
Weisstuch Aaron
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