Method of forming thin silicon mesas having uniform thickness

Details Method of forming thin silicon mesas having uniform thickness Method of forming thin silicon mesas having uniform thickness

1992-04-30

1994-08-02

Pal, Asok

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148DIG50, 156635, 156645, 156648, 156649, 437 61, 437 78, H01L 2108

Patent

active

053342810

ABSTRACT:
An SOI wafer has a device layer of initial thickness that is formed into a set of mesas in the interval between which a temporary layer of polysilicon is deposited to a precisely controlled thickness. This polysilicon is entirely converted in a self-limiting process to an oxide etch stop having a thickness much smaller than the initial thickness. The mesas are thinned by a chemical mechanical polishing technique until the mesa is the same level as the top surface of the new oxide. The etch stop layer of oxide is not removed but serves both as an isolating layer to provide dielectric isolation between mesas in the final circuit and also as a visual gauge to determine the time when the polishing process should stop.

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B. Davari, et al., "A New Planarization Technique, Using a Combination of RIE and Chemical Mechanical Polish (CMP)", Technical Digest-1989 IEDM, pp. 61-64.

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