Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
Reexamination Certificate
2004-01-16
2009-06-23
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Plural fluid growth steps with intervening diverse operation
C438S494000, C438S455000
Reexamination Certificate
active
07550370
ABSTRACT:
A method of forming a silicon germanium on insulator (SGOI) structure. A SiGe layer is deposited on an SOI wafer. Thermal mixing of the SiGe and Si layers is performed to form a thick SGOI with high relaxation and low stacking fault defect density. The SiGe layer is then thinned to a desired final thickness. The Ge concentration, the amount of relaxation, and stacking fault defect density are unchanged by the thinning process. A thin SGOI film is thus obtained with high relaxation and low stacking fault defect density. A layer of Si is then deposited on the thin SGOI wafer. The method of thinning includes low temperature (550° C.-700° C.) HIPOX or steam oxidation, in-situ HCl etching in an epitaxy chamber, or CMP. A rough SiGe surface resulting from HIPOX or steam oxidation thinning is smoothed with a touch-up CMP, in-situ hydrogen bake and SiGe buffer layer during strained Si deposition, or heating the wafer in a hydrogen environment with a mixture of gases HCl, DCS and GeH4.
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Bedell Stephen W.
Chen Huajie
Mocuta Dan M.
Sadana Devendra K.
Cai Yuanmin
International Business Machines - Corporation
Menz Laura M
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