Method of forming thin semiconductor film

Details Method of forming thin semiconductor film Method of forming thin semiconductor film

1996-01-29

1998-02-03

Niebling, John

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438482, 438488, H01L 2120

Patent

active

057144150

ABSTRACT:
A method of forming a thin semiconductor film including an impurity for obtaining a conductivity includes the step of depositing a thin amorphous silicon film by chemical vapor deposition using silane as a deposition source gas at a deposition rate of at least 3 nm/minute while introducing the impurity, and the step of crystallizing the deposited thin amorphous silicon film by annealing.

REFERENCES:
patent: 5198387 (1993-03-01), Tang
patent: 5227329 (1993-07-01), Kobayashi et al.
patent: 5242855 (1993-09-01), Oguro
patent: 5366917 (1994-11-01), Watanabe et al.
patent: 5371039 (1994-12-01), Oguro
patent: 5418180 (1995-05-01), Brown
patent: 5464795 (1995-11-01), Oguro
patent: 5532183 (1996-07-01), Sugawara
"Silicon Processing For VLSI ERA", vol. I, Process Technology, Wolf et al., pp. 169-171.
Kobayashi et al; "Novel Highly Conductive Polycrystalline Silicon Films Reducing Processing Temperature Down to 650.degree. C."; 1988; pp. 57-60; Conference on Solid State Devices and Materials, Tokyo.

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