Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-01-24
2006-01-24
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S157000, C438S238000
Reexamination Certificate
active
06989298
ABSTRACT:
A silicon layer is formed on a substrate, and then the silicon layer is patterned, and source regions, drain regions and connectors, all with the same conductivity, are formed. The source regions are connected with the drain regions electrically by the connectors, and short circuits are thus constructed. Then, subsequent procedures of thin film transistor fabrication are performed in turn. Finally, when the source/drain metal is patterned to form data lines, the connectors are cut off by etching as the source/drain metal is etched.
Chang Jiun-Jye
Chen Chen-Ming
Chu Fang-Tsun
Glenn Michael A.
Glenn Patent Group
Industrial Technology Research Institute
Pham Long
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