Method of forming thin film transistor array substrate

Details Method of forming thin film transistor array substrate Method of forming thin film transistor array substrate

2011-05-17

2011-05-17

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S155000, C438S158000, C438S159000, C438S701000, C257SE21370, C257SE21372, C257SE21414

Reexamination Certificate

active

07943441

ABSTRACT:
A method of forming a thin-film transistor array substrate is provided. A first mask is used to define a source, a drain and a channel on a substrate. A dielectric layer is formed to cover the source, the drain, the channel and the substrate. A second mask is used to define a patterned photoresist and the dielectric layer. A transparent conductive layer is formed to cover the patterned photoresist and the substrate. A lift-off process is performed to remove the patterned photoresist and a portion of the transparent conductive layer disposed on the patterned photoresist. A third mask is used to define a gate disposed on the dielectric layer.

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