Method of forming thin film transistor

Details Method of forming thin film transistor Method of forming thin film transistor

2008-06-25

2010-10-05

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

Reexamination Certificate

active

07807519

ABSTRACT:
A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate and includes at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.

REFERENCES:
patent: 2002/0047947 (2002-04-01), Hur et al.
patent: 2002/0119586 (2002-08-01), Kido
patent: 2005/0024519 (2005-02-01), Nishida et al.

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