Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2005-03-18
2009-08-18
Duda, Kathleen (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S320000, C430S322000, C430S311000
Reexamination Certificate
active
07575853
ABSTRACT:
The present invention provides a thin film pattern forming method capable of forming a thin film pattern having small dimensions at higher precision. A thin film pattern forming method of the invention includes: a step of forming a first thin film on a substrate; a step of forming a bilayer resist pattern; a step of forming a soluble layer as a covering layer; and a step of forming a first thin film pattern by selectively removing the first thin film by dry etching using the bilayer resist pattern as a mask. Since the soluble layer generally and continuously covering the periphery of the bilayer resist pattern and the first thin film in an area other than the area covered with the bilayer resist pattern is formed, deformation of the shape of the bilayer resist pattern can be suppressed at the time of dry etching and a deposition amount of a re-deposit9can be also reduced. Consequently, the isolated first thin film pattern having small dimensions and defined by a contour can be formed at higher precision. Further, the first thin film pattern17is formed by dry etching and, after that, the bilayer resist pattern covered with the soluble layer is removed by using a solvent which can dissolve both the bilayer resist pattern and the soluble layer. Thus, the first thin film pattern and the bilayer resist pattern can be separated from each other without a hitch.
REFERENCES:
patent: 5620909 (1997-04-01), Lin et al.
patent: 6253445 (2001-07-01), Yoon
patent: 6434814 (2002-08-01), Chang et al.
patent: 6531436 (2003-03-01), Sahbari et al.
patent: 6811817 (2004-11-01), Sugeta et al.
patent: 7007374 (2006-03-01), Lille
patent: 7041518 (2006-05-01), Lee et al.
patent: 2001/0027029 (2001-10-01), Kamijima
patent: 2003/0036021 (2003-02-01), Khan et al.
patent: 2004/0084685 (2004-05-01), Yabusaki et al.
patent: 2005/0170628 (2005-08-01), Sharma et al.
patent: A-56-037630 (1981-04-01), None
patent: A-63-018631 (1988-01-01), None
patent: A-04-335644 (1992-11-01), None
patent: A-11-175922 (1999-07-01), None
patent: A-2001-226785 (2001-08-01), None
patent: A-2002-204003 (2002-07-01), None
patent: A-2003-142754 (2003-05-01), None
patent: A-2003-517693 (2003-05-01), None
patent: WO 00/36594 (2000-06-01), None
Duda Kathleen
Oliff & Berridg,e PLC
Raymond Brittany
TDK Corporation
LandOfFree
Method of forming thin film pattern and method of forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming thin film pattern and method of forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming thin film pattern and method of forming... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4062981