Method of forming thin-film pattern

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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156650, 156656, 1566591, 156667, 427 96, 430318, C23F 102, B44C 122, C03C 1500, C03C 2506

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044515545

ABSTRACT:
A method of forming a thin-film pattern such as a thin-film circuit component comprises successive formation of a first metal layer and then a photo resist layer on a substrate by the utilization of a photoetching technique. The substrate having the first metal layer and the photo resist layer on the top of the first metal layer is deposited with second metal layers which are discontinued from each other, one of the second metal layers being deposited on the top of the photo resist layer while the other of the second metal layers is deposited directly on the substrate around the first metal layer. The substrate assembly is then immersed into a solvent bath to remove the photo resist layer together with the second metal layer resting thereon and is thereafter immersed into an etchant bath to remove the first metal layer, leaving the second metal layer on the substrate.

REFERENCES:
patent: 3679949 (1972-07-01), Uekusa et al.
patent: 4108717 (1978-08-01), Widmann
patent: 4232059 (1980-11-01), Proffitt
patent: 4256816 (1981-03-01), Dunkleberger
IEEE Journal of Solid State Circuits, vol. SC-11, No. 4, pp. 466-471, Aug. 1976, Metallization for Integrated Circuits Using a Lift-off Technique by D. W. Widmann.

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