Method of forming thin film of amorphous silicon by plasma CVD

Details Method of forming thin film of amorphous silicon by plasma CVD Method of forming thin film of amorphous silicon by plasma CVD

1991-11-26

1993-09-21

King, Roy

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427573, 427578, 4272551, 4272481, 427314, B05D 306, C23C 1600

Patent

active

052467449

ABSTRACT:
The invention relates to a plasma CVD method for the deposition of a thin film of amorphous silicon, or an amorphous silicon alloy, on a substrate by glow discharge decomposition of a raw material gas such as silane gas. The degradation of the photoconductivity of the obtained amorphous silicon film by irradiation with light is suppressed by mixing xenon gas with the raw material gas such that at the entrance to the reaction chamber the volume ratio of xenon gas to the raw material gas is not less than 1 and, preferably, not more than 30. A nearly comparable effect can be gained, and the material cost can be reduced, by mixing 1 part by volume of the raw material gas with 0.05 to 1 part of xenon gas and 5 to 30 parts of hydrogen gas.

REFERENCES:
patent: 4492736 (1985-01-01), Tanner
patent: 4521447 (1985-06-01), Ovshinsky et al.
Schmitt; Thin Solid Films, vol. 174, No. 1 (Jul. 1989), pp. 193-202 Amorphous Silicon Deposition: Industrial and Technical Challenges.

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