Method of forming thin film

Details Method of forming thin film Method of forming thin film

1995-08-28

1998-11-24

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427253, C23C 1614

Patent

active

058403663

ABSTRACT:
A W film having good surface morphology and high reflectance is formed while avoiding any degradation of the characteristics such as specific resistivity. The method for forming a thin film is carried out by depositing a W film on a heated substrate using CVD. The raw material gas is WF.sub.6, and the reducing gases are SiH.sub.4 and H.sub.2. In the first stage of the film formation, the reaction between WF.sub.6 and SiH.sub.4 forms nuclei on the surface of the substrate. In the second stage, following the first stage, the reaction between WF.sub.6 and H.sub.2 forms the W film. The second stage is controlled to form crystal grains of a predetermined size. The first stage and the second stage are alternately repeated as many times as necessary.

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patent: 5429991 (1995-07-01), Iwasaki et al.
patent: 5436200 (1995-07-01), Tanaka

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