Method of forming the NDMOS device body with the reduced...

Details Method of forming the NDMOS device body with the reduced... Method of forming the NDMOS device body with the reduced...

2007-10-11

2010-10-05

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S377000, C257SE21135, C257SE21158, C257SE21211, C257SE21466

Reexamination Certificate

active

07807555

ABSTRACT:
This disclosure describes an improved process and resulting structure that allows a single masking step to be used to define both the body and the threshold adjustment layer of the body. The method consists of forming a first mask on a surface of a substrate with an opening exposing a first region of the substrate; implanting through the opening a first impurity of a first conductivity type and having a first diffusion coefficient; and implanting through the opening a second impurity of the first conductivity type and having a second diffusion coefficient lower than the first diffusion coefficient. The first and second impurities are then co-diffused to form a body region of a field effect transistor. The remainder of the device is formed.

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