Method of forming T electrode in field effect transistor

Details Method of forming T electrode in field effect transistor Method of forming T electrode in field effect transistor

1997-10-02

1999-02-09

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438579, 438952, H01L 21338, H01L 2128, H01L 2144

Patent

active

058693653

ABSTRACT:
In a method of manufacturing a semiconductor device, an operating layer and a light-shielding film are sequentially formed to form a recess step on a semiconductor substrate. A first photoresist film is formed on the light-shielding film. The light-shielding film is patterned using the photoresist film as a mask to form a gate electrode formation opening portion. A metal film is formed on the entire surface including the opening portion. The metal film is selectively etched using, as a mask, a second photoresist film formed on the metal film, thereby forming a gate electrode having a T shape in the longitudinal section. The second photoresist film is removed. The light-shielding film is removed.

REFERENCES:
patent: 5302538 (1994-04-01), Ishikawa et al.
patent: 5496748 (1996-03-01), Hattori et al.
patent: 5656128 (1997-08-01), Hashimoto et al.
Wolf, S. and Tauber, R.N., Silicon Processing for the VLSI Era, Wol. 1, Sunset Beach, California, pp. 156-158, 427-428,518-582,1986.
Ohno, Terukazu, "A high Performance Ultra-Thin Quarter-Micron CMOS/SIMOX Technology", NTT LSI Laboratories, 3B-1, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01, Japan, pp. 25-26.
Woerlee, P.H., "A Half-Micron CMOS Technology Using Ultra-Thin Silicon on Insulator", IEEE, IEDM 90-583, Philips Research Laboratories, The Netherlands, 1990, pp. 52.1.4.

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