Method of forming suspended structure

Details Method of forming suspended structure Method of forming suspended structure

2007-04-18

2008-12-16

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S459000, C438S670000, C257SE21043, C257SE21038

Reexamination Certificate

active

07465601

ABSTRACT:
A method of forming a suspended structure is disclosed. Initially, a substrate is provided. A patterned first sacrificial layer and a patterned second sacrificial layer are formed on a front surface of the substrate. The second sacrificial layer has an opening exposing a part of the substrate and a part of the first sacrificial layer. A structural layer is formed covering the abovementioned sacrificial layers. Thereafter, a lift-off process is performed to remove the second sacrificial layer and define the pattern of the structural layer. A first etching process is performed on a back surface of the substrate utilizing the first sacrificial layer as an etching barrier and a through hole is formed under the first sacrificial layer. A second etching layer is performed to remove the first sacrificial layer and a suspended structure is thereby formed.

REFERENCES:
patent: 5888845 (1999-03-01), Bashir et al.
patent: 7258806 (2007-08-01), Ho
patent: 2004/0140732 (2004-07-01), Truninger et al.
patent: 2007/0298613 (2007-12-01), Kang

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