Method of forming surface irregularities and method of...

Details Method of forming surface irregularities and method of... Method of forming surface irregularities and method of...

2007-05-10

2009-10-13

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S046000, C438S047000, C438S590000, C438S700000, C438S745000, C438S767000

Reexamination Certificate

active

07601621

ABSTRACT:
A method of forming surface irregularities comprises preparing a GaN substrate; forming a mask on a surface of the GaN substrate, the mask defining a surface-irregularity formation region; and wet-etching portions of the surface of the GaN substrate by using the mask as an etching mask. The wet-etching of the GaN substrate is performed until the end of one surface of the GaN substrate to be formed by the wet-etching using the mask meets the end of another surface of the GaN substrate to be formed by the wet-etching using the mask, the another surface being adjacent to the one surface.

REFERENCES:
patent: 5214306 (1993-05-01), Hashimoto
patent: 2002/0177247 (2002-11-01), Kwak et al.
patent: 2007/0262428 (2007-11-01), Summers
patent: 2007/0267640 (2007-11-01), Lee et al.
patent: 2004-71657 (2004-03-01), None
patent: 10-2005-0045042 (2005-05-01), None
patent: 10-2005-0097075 (2005-07-01), None

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