Method of forming stacked-die integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Reexamination Certificate

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Details

C257S686000, C257S774000, C257S778000, C257SE23145, C438S108000, C438S109000

Reexamination Certificate

active

07989959

ABSTRACT:
A stacked-die integrated circuit and a method of fabricating same. The stacked-die integrated circuit has circuitry formed in the first surface of a mother die, a plurality of through-die vias with at least one through-die via providing electrical connection between the circuitry of the mother die and the second surface and a plurality of contact pads formed in the second surface of the semiconductor die for mounting a daughter die wherein some of the contact pads are electrically isolated dummy pads.

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