Method of forming solid blind vias through the dielectric...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S618000, C438S678000, C257SE21006, C257SE21007, C257SE21027, C257SE21058, C257SE21077, C257SE21170, C257SE21320, C257SE21134, C257SE21231, C257SE21267, C257SE21278, C257SE21293, C257SE21329, C257SE21347

Reexamination Certificate

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08008188

ABSTRACT:
A method is provided comprising: coating an electrically conductive core with a first removable material, creating openings in the first removable material to expose portions of the electrically conductive core, plating a conductive material onto the exposed portions of the electrically conductive core, coating the conductive material with a second removable material, removing the first removable material, electrophoretically coating the electrically conductive core with a dielectric coating, and removing the second removable material.

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