Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-30
2011-08-30
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S678000, C257SE21006, C257SE21007, C257SE21027, C257SE21058, C257SE21077, C257SE21170, C257SE21320, C257SE21134, C257SE21231, C257SE21267, C257SE21278, C257SE21293, C257SE21329, C257SE21347
Reexamination Certificate
active
08008188
ABSTRACT:
A method is provided comprising: coating an electrically conductive core with a first removable material, creating openings in the first removable material to expose portions of the electrically conductive core, plating a conductive material onto the exposed portions of the electrically conductive core, coating the conductive material with a second removable material, removing the first removable material, electrophoretically coating the electrically conductive core with a dielectric coating, and removing the second removable material.
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Olson Kevin C.
Wang Alan E.
Lenart Robert P.
Nhu David
PPG Industries Ohio Inc.
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