Method of forming SOI substrate

Details Method of forming SOI substrate Method of forming SOI substrate

1997-04-01

1998-06-30

Dang, Trung

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438404, 438406, 438977, 438928, H04L 2130

Patent

active

057733546

ABSTRACT:
The present invention provides a method of forming an SOI substrate which causes no variation in thickness of SOI layers formed by polishing the silicon substrate, thereby causing no factor interfering with a reduction in thickness of the SOI layers.
In the method of forming an SOI substrate, the surface of a silicon substrate which is form to have unevenness is covered with an insulator serving as a polishing stopper layer, and a polishing substrate is laminated on the insulator. The rear side of the silicon substrate is chemically polished with a polishing solution consisting of an alkali solution to leave as SOI layers the projection portions of the silicon substrate. At this time, the polishing pressure and the rotation speed of a polishing tool are set so that the differential coefficient of the rate of reduction in thickness of the silicon substrate with respect to the product of the polishing pressure and the rotation speed of the polishing tool is substantially equal to the differential coefficient of the rate of reduction in thickness of the SOI layers with respect to that product. It is thus possible to suppress the reduction in thickness of the SOI layers and maintain the thickness precision of the SOI layers in chemical polishing.

REFERENCES:
patent: 5437762 (1995-08-01), Ochiai et al.
patent: 5474952 (1995-12-01), Fujii
patent: 5597739 (1997-01-01), Sumi et al.

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