Method of forming single crystals of beta silicon carbide using

Details Method of forming single crystals of beta silicon carbide using Method of forming single crystals of beta silicon carbide using

1979-05-09

1982-09-14

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

C30B 910

Patent

active

043494072

ABSTRACT:
A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330.degree. C. to about 1500.degree. C.

REFERENCES:
patent: 2996456 (1961-08-01), Hergenrother
patent: 3205101 (1965-09-01), Mlavsky
patent: 3278274 (1966-10-01), Liebmann et al.
patent: 3669763 (1972-06-01), Perusek
patent: 3956032 (1976-05-01), Powell et al.
patent: 4032371 (1977-06-01), Andersen
Pellegrini et al., Silicon Carbide-1973 Ed. Marshall, pp. 161-167, U.S.C. Press, Columbia S.C. 1974.

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