Method of forming single-crystalline thin film by beam irradiato

Details Method of forming single-crystalline thin film by beam irradiato Method of forming single-crystalline thin film by beam irradiato

1997-03-18

1998-08-18

Niebling, John

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 92, 117 98, 117103, 118723CB, 118723FI, 118723FE, C30B 2506

Patent

active

057953856

ABSTRACT:
In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si. Therefore, the as-grown amorphous Si is sequentially converted to a single-crystalline Si thin film having crystal axes which are so regulated that the densest planes are oriented perpendicularly to the respective directions of incidence, by an action of the law of Bravais. Thus, a single-crystalline thin film is formed on a polycrystalline substrate.

REFERENCES:
patent: 4095004 (1978-06-01), Fraas et al.
patent: 4793908 (1988-12-01), Scott et al.
patent: 4800100 (1989-01-01), Herbots et al.
patent: 4888202 (1989-12-01), Murakami et al.
patent: 4925829 (1990-05-01), Fujjita et al.
Takamuri et al. in Jap. Jr.Applied Physics vol. 26(2), Feb. 1987, pp. L142-L144 in "Cleaning of MBE GaAs substrates by Hydrogen Radical Beam Irradiation".
Ion Beam Deposition, Film Modification and Synthesis, S.M. Rossnagel and J.J. Cuomo, MRS Bulletin, Deposition Processes Part II, Dec. 1986, vol. XIII, No. 12.
Subsurface Processing of Electronic Materials Assisted by Atomic Displacements, J.S. Williams, MRS Bulletin, vol. 17, No. 6 (Jun.) 1992, pp. 47-51.
Patent Abstracts of Japan, vol. 10, No. 107 (C-341), Apr. 22, 1986, JP 60-235788, Nov. 22, 1985.
Patent Abstracts of Japan, vol. 14, No. 543 (C-0783), Nov. 30, 1990, JP 02-229792, Sep. 12, 1990.
Patent Abstracts of Japan, vol. 95, No. 3, Apr. 28, 1995, JP 06-340500, Dec. 13, 1994.

Affiliated with

Also associated with

Rating

Method of forming single-crystalline thin film by beam irradiato does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming single-crystalline thin film by beam irradiato, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming single-crystalline thin film by beam irradiato will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1111259