Method of forming single-crystalline thin film

Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Coating

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505732, 20429813, 117944, C30B 2308, C30B 2506

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active

056078994

ABSTRACT:
A thin film strongly orienting specific crystal axes is deposited on a polycrystalline or amorphous base material in accordance with laser deposition in a simpler device through a simpler process. A target is irradiated with a laser beam, for forming a thin film in accordance with laser ablation of depositing a substance scattered from the target on a base material. In order to form the thin film, prepared are conditions capable of forming a film orienting a specific crystal axis substantially perpendicularly to the base material in substantially parallel arrangement of the target and the base material. Under the conditions, a film is deposited on the base material which is inclined at a prescribed angle .theta. with respect to the target. It is possible to deposit a film strongly orienting a specific crystal axis in a plane substantially parallel to the base material surface by inclining the base material under the specific film forming conditions.

REFERENCES:
patent: 5037521 (1991-08-01), Nishikawa et al.
patent: 5159169 (1992-10-01), Nishikawa et al.
patent: 5231075 (1993-07-01), Nagaishi et al.
patent: 5242706 (1993-09-01), Cotell et al.
Proceedings for 49th Teionkougaku Choudendou Gakkai, Spring 1993, p. 134 (with English Translation).
Yu et al. "Control of thin film orientation by glancing angle ion bombardment during growth" J. Vac. Sci. Technol. A4(3), p. 443, May/Jun. 1986.

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